GaN on Sic HEMT Transistor

Source: Richardson RFPD

SiC RF Power Transistor

These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

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These RF Power Transistors are manufactured with TriQuint Semiconductor’s 0.25μm process. This process can potentially lower system costs by decreasing the number of amplifier line-ups necessary by utilizing advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.

These transistors can be used as a driver or final stage, and operate at 32V for improved overall circuit efficiency. Download the datasheet for more information.