16 – 20.5 GHz GaN Power Amplifier: APN279

Source: Northrop Grumman Corp
16 – 20.5 GHz GaN Power Amplifier: APN279

Northrop Grumman offers the APN279 GaN power amplifier designed for use in point-to-point and multipoint digital radios, and commercial satcom applications. This monolithic, two-stage power device is fully passivated to ensure rugged and reliable operation.

The APN279 features Au-based bond pad and backside metallization that is compatible with epoxy and eutectic die attach methods.

Additional APN279 specifications include:

  • RF Frequency: 16 to 20.5 GHz
  • Linear gain: 19 dB, typical
  • OP1dB: 36 dBm, typical
  • Psat: 41.5dBm, typical
  • PAE: >34% @ Psat
  • DC Power: 20 Vdc at 712 mA

Download the available datasheet for more features and specifications on the APN279 GaN Power Amplifier.