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1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L

Source: Qorvo

1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

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With an industry standard air cavity package and support of both CW and pulsed operations, the QPD1025L is ideally suited for IFF, avionics, and test instrumentation applications.

Key QPD1025L features include:

  • Frequency Range: 1.0 - 1.1 GHz
  • Output Power (P3dB1): 1862 Watt
  • Linear Gain1: 22.5 dB
  • Typical PAE3dB1 77.2 %
  • Operating voltage: 65 V
  • CW and Pulse capable
    Note1: @ 1.0GHz Load Pull

For additional features and specifications, download the datasheet.

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