Skyworks Solutions has introduced a new single stage GaAs pHEMT LNA that offers low noise figure (0.60 dB), very high linearity (23 dBm IIP3), and excellent return loss (14 dB) in a small 2 x 2 mm DFN package. On-die active bias design ensures consistent performance and enables unconditional stability. The 0.6 – 1.2 GHz SKY67001-396LF is designed for cellular infrastructure applications including tower mounted amplifiers, remote radio units, repeaters and base stations. The LNA is ideal for cost sensitive, yet demanding situations which require a highly efficient amplifier with high gain and low-noise figure.
The SKY67001-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides good return loss, low noise, and high linearity performance. The internal active bias circuitry provides stable performance over temperature and process variation. This LNA offers the ability to externally adjust supply current and gain. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. Pin 3 (VBIAS) should be connected to RFOUT/VDD through an external resistor to control the supply current. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. This LNA operates in the frequency range of 0.6 to 1.2 GHz. For higher frequency operation, the pin-compatible SKY67002-396LF or SKY67003-396LF should be used. The LNA is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package.