1. GaN S-Band 50Ω Transistor: IGT2731M130

    Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

  2. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  3. 30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S

    Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.

  4. RF Transistor
    Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
  5. RF Transistor
    Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
  6. 400 W LDMOS Transistor For S-band Radar: BLS9G2731L-400U

    RFMW introduces the BLS9G2731L-400U from Ampleon as a 400 W LDMOS power transistor ideally designed for use in S-band applications in the 2700 MHz to 31 MHz frequency range. With 400 W pulsed power capability in class-AB circuits, the transistor offers 47% efficiency with up to 13 dB of gain.

  7. Broadband General Purpose GaN Transistor: IGN0160UM10

    Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

  8. 800-1000 MHz 12W P-Band Radar Transistor
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
  9. VRF152 -- RF Power Vertical MOSFET Transistor
    The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
  10. Wideband RF Transistors
    The PTF 10049 and PTF 10037 families of wideband, high-power, RF transistors are designed for use in the amplification of UHF frequencies