High Power Amplifiers

PRODUCTS AND SERVICES

High Power RF Amplifiers: 700 MHz to 2.1 GHz High Power RF Amplifiers: 700 MHz to 2.1 GHz

Corry Micronics’ line of high power RF amplifiers feature up to 40% efficiency, an extended temperature range of -20oC to 55oC for MIL-STD applications, and status monitoring signals that provide diagnostic information.

High Power Amplifier: CBM-001860-DIE High Power Amplifier: CBM-001860-DIE
The CBM-001860-DIE is a wide bandwidth, two-stage high power amplifier capable of providing over 2 Watts of output power from 2.5 to 6 GHz. This amplifier is matched to 50Ω at both the input and output terminals and supports multiple operating drain voltages.
Class AB Linear Amplifiers: Series BHE Class AB Linear Amplifiers: Series BHE

The new Series BHE Amplifiers from Comtech PST are arranged in a wide variety of configurations with operating frequency ranges from 20 to 1000 MHz. These AB linear amplifiers are designed to provide load VSWR protection by way of an electronic power output turndown system employing negative feedback techniques. The system is self-correcting as a function of load VSWR to infinity, at any phase angle with a typical response time of 60 µsec.

Solid State Broadband High Power RF Amplifiers Solid State Broadband High Power RF Amplifiers

Ophir RF offers Solid State Broadband High Power RF Amplifiers for EMC, Communications, and Military applications. Links to datasheets can be found below, along with information on typical users of Ophir RF’s amplifiers, and the applications in which they’re used.

High-Power Broadband Gallium Nitride RF Amplifier: SSPA 0.020-6.000-35 High-Power Broadband Gallium Nitride RF Amplifier: SSPA 0.020-6.000-35
Aethercomm Model Number SSPA 0.020-6.000-35 is a high power, super broadband, Gallium Nitride RF amplifier that operates from 20 MHz to 6000 MHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-decade bandwidth with decent power added efficiency. This is an industry first for bandwidth, power and efficiency in a package like this. This amplifier operates from a base plate temperature -40°C to +75°C for maximum performance. It is packaged in a modular housing that is 7.65(w)” by 2.5(l)” by 1.27(h)”. This amplifier has a typical P3dB between 35 to 50 watts at room temperature.
C-Band, High-Power Solid State Power Amplifier Module C-Band, High-Power Solid State Power Amplifier Module

MtronPTI's PA4020X series of high-power solid state amplifier modules operates in the 2.5 to 4.8 GHz frequency range. The amplifier highlights a Class AB linear LDMOS-GaN design, an instantaneous wide bandwidth, and a rugged, high-reliability form factor that is suitable for all modulation standards.

100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

6 – 18 GHz, 200 W TWT Amplifier: dB-4139 6 – 18 GHz, 200 W TWT Amplifier: dB-4139

The dB-4139 TWT Amplifier (TWTA) is designed to operate within the 6 – 18 GHz frequency range and provide up to 200 W CW output power for electronic countermeasure (ECM), electronic warfare (EW) simulation, and multi-band communication applications.

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