MMIC Amplifiers

PRODUCTS AND SERVICES

Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series
RFMD’s RFVC182X family of narrowband MMIC voltage controlled oscillators (VCOs) with integrated RF output buffer amplifiers have excellent temperature, shock, and vibration performance. These VCOs are suitable for applications in the 4.45 to 8.7GHz frequency range. All products in this family of VCOs provide POUT >8dBm from a +3V single supply and deliver low phase noise performance with minimum power consumption. Each VCO comes in a compact, RoHS compliant 4.0 x 4.0mm QFN package.
SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier (MMIC) in die form. At 1950 MHz, this amplifier provides 16dB of gain when biased at 50mA.
XP1012 37 To 40 GHz GaAs MMIC Power Amplifier XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F 75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F

The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D 8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D

The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.

XP1010 21 To 24 GHz GaAs MMIC Power Amplifier XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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