Rugged LDMOS RF Power Transistors for Harsh Conditions Rugged LDMOS RF Power Transistors for Harsh Conditions

These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

RF Power Transistor RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
50-Ohm GaN RF Input-Matched Transistor: QPD1000 50-Ohm GaN RF Input-Matched Transistor: QPD1000

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

500 W GaN RF IMFET: QPD1003 500 W GaN RF IMFET: QPD1003

Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

50 V GaN Transistors 50 V GaN Transistors

Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.

Insulated-gate Bipolar Transistors (IGBTS) Insulated-gate Bipolar Transistors (IGBTS)

Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.

HF12-125 Bipolar Power Transistor HF12-125 Bipolar Power Transistor
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
MDS500L Avionics Bipolar Transistor MDS500L Avionics Bipolar Transistor
The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...
More Transistors Products & Services