Transistors

TRANSISTORS PRODUCTS & SERVICES

RF Transistor RF Transistor
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

Avionics Transistors Avionics Transistors
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
HF50-Series Bipolar Power Transistors HF50-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
HF28-Series Bipolar Power Transistors HF28-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
ARF477FL -- RF Power MOSFET Transistors ARF477FL -- RF Power MOSFET Transistors
The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...
RF Transistor RF Transistor
Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
125-167 MHz 650W VHF Band Transistor 125-167 MHz 650W VHF Band Transistor
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...
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