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Avionics Pulsed Power RF Transistors Avionics Pulsed Power RF Transistors
Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications
0405-1000M - 400 To 450 MHz UHF Power Transistor 0405-1000M - 400 To 450 MHz UHF Power Transistor
The 0405-1000M transistor from Microsemi Power Products Group is designed for UHF frequency, 400 to 450 MHz. This high performance, common emitter, class C, output stage offers unparalleled performance of 1000W of peak power, 70% collector efficiency at 450 MHz, and is in a hermetically sealed package for the best reliability for weather radar and over the horizon radar applications...
Mobility Transistors Mobility Transistors
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
RF Power Transistor RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
Silicon Carbide RF Power Transistors Silicon Carbide RF Power Transistors
Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications. Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022 DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

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