Transistors

TRANSISTORS PRODUCTS & SERVICES

100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

900-MHz Transistors 900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
NPN Wideband Silicon RF Transistor: BFU630F NPN Wideband Silicon RF Transistor: BFU630F
NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
DME800 Avionics Transistor DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
TAN350 Avionics Transistor TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
Insulated-gate Bipolar Transistors (IGBTS) Insulated-gate Bipolar Transistors (IGBTS)

Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.

GaN S-Band 50Ω Transistor: IGT2731L120 GaN S-Band 50Ω Transistor: IGT2731L120

Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

CW VDMOS Transistors CW VDMOS Transistors
Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
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