Transistors

TRANSISTORS PRODUCTS & SERVICES

RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM

This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.

DME800 Avionics Transistor DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

High Power 1214-370M Transistor High Power 1214-370M Transistor
This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
Avionics Transistors Avionics Transistors
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
1200W GaN L-Band Avionics Transistor: Highest Power In The Industry 1200W GaN L-Band Avionics Transistor: Highest Power In The Industry

Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.

GaN Wideband Transistor: MAGX-011086 GaN Wideband Transistor: MAGX-011086

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

50 V GaN Transistors 50 V GaN Transistors

Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.

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